• DocumentCode
    2073077
  • Title

    Two-Terminal Devices in Millimeter-Wave Range: Physical Analysis and Future Trends

  • Author

    Rolland, P.A. ; Friscourt, M.R. ; Dalle, C. ; Lippens, D. ; Haese, N.

  • Volume
    1
  • fYear
    1990
  • fDate
    9-13 Sept. 1990
  • Firstpage
    34
  • Lastpage
    44
  • Abstract
    This paper reviews the advance made in the perfomance of millimeter-wave two-terminal devices, mainly Gunn, IMPATT and resonant-tunneling diodes, on the basis of the semiconductor material systems used (Si, GaAs, InP).
  • Keywords
    Cathodes; Electrons; Frequency; Gallium arsenide; Gunn devices; Indium phosphide; Power generation; Resonant tunneling devices; Semiconductor diodes; Solid state circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1990. 20th European
  • Conference_Location
    Budapest, Hungary
  • Type

    conf

  • DOI
    10.1109/EUMA.1990.336168
  • Filename
    4135982
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2073077