• DocumentCode
    2073278
  • Title

    S-band low noise amplifier for TT&C receiver in LEO satellites

  • Author

    Siddiqui, Muhammed Adnan

  • fYear
    2005
  • fDate
    9-11 June 2005
  • Firstpage
    426
  • Lastpage
    431
  • Abstract
    This paper describes the design, simulation and measurements of a 2025 to 2120 MHz single stage Pseudomorphic High Electron Mobility Transistor (pHEMT) Low Noise Amplifier (LNA), intended for use in a TT&C receiver in low Earth orbit (LEO) satellite. The LNA has been simulated with software and the results show that it provides a gain of more than 10 dB, a noise figure below 0.58 dB and VSWR less than 1:1.35. The circuit is designed on Roger´s Duroid 5880 microwave laminate. The power consumption is 27 mW at VDD=12 V.
  • Keywords
    HEMT circuits; UHF circuits; low noise amplifiers; radio receivers; satellite communication; 12 V; 2025 to 2120 MHz; 27 mW; LEO satellites; S-band low noise amplifier; TT&C receiver; low Earth orbit satellite; power consumption; single stage pseudomorphic high electron mobility transistor LNA; Circuit noise; Circuit simulation; Electron mobility; Extraterrestrial measurements; HEMTs; Low earth orbit satellites; Low-noise amplifiers; MODFETs; Noise measurement; PHEMTs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Recent Advances in Space Technologies, 2005. RAST 2005. Proceedings of 2nd International Conference on
  • Print_ISBN
    0-7803-8977-8
  • Type

    conf

  • DOI
    10.1109/RAST.2005.1512605
  • Filename
    1512605
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2073278