Analysis of Anderson localization of light in GaN nanocolumns

Author

Sakai, Masaru ; Inose, Yuta ; Ohtsuki, Tomi ; Ema, Kazuhiro ; Kikuchi, Akihiko ; Kishino, Katsumi

Author_Institution

Interdiscipl. Sch. of Med. & Eng., Univ. of Yamanashi, Kofu, Japan

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

1

Abstract

In this study, GaN nanocolumns was fabricated through RF-plasma assisted molecular beam epitaxy on sapphire substrate. SEM was used for nanocolumn structure analysis. Photoluminescence image of InGaN-single quantum well at the top of each nanocolumn was detected at each near-field scanning optical microscopy (NSOM)scanning point. The intensity was observed to decrease exponentially which was attributed to Anderson localization.

Keywords

Anderson model; III-V semiconductors; gallium compounds; indium compounds; molecular beam epitaxial growth; nanofabrication; nanostructured materials; near-field scanning optical microscopy; photoluminescence; plasma CVD; semiconductor quantum wells; Anderson localization; InGaN-GaN; RF-plasma assisted molecular beam epitaxy; SEM; nanocolumn structure analysis; nanocolumns; near-field scanning optical microscopy; photoluminescence image; quantum well; sapphire substrate; Microscopy; Nonlinear optics; Optical microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference

Conference_Location

Munich

ISSN

Pending

Print_ISBN

978-1-4577-0533-5

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/CLEOE.2011.5943273

Filename

5943273