DocumentCode
2074297
Title
Underfills for lead-free and low-k flip chip packages
Author
Ji, Qing ; Zhao, Renzhe ; Huang, Qiaohong ; Zhu, Pukun
Author_Institution
Henkel Corp., Irvine, CA
fYear
2009
fDate
26-29 May 2009
Firstpage
1830
Lastpage
1835
Abstract
The introduction of lead-free bumps into flip chip packages in combination with the incorporation of Cu / low-k or ultra low-k dielectric materials is making underfill development more challenging. The traditional concept of stiff and rigid underfills does not satisfy the new device reliability requirements. Rather, newer generation underfill materials need to balance the physical properties, such as Tg (glass transition temperature), CTE (coefficient of thermal expansion), and modulus etc., to overcome the internal stresses built into the flip chip system. In this paper, a series of underfills with a wide range of underfill properties, such as Tg of 50degC - 130degC, CTE1 of 16 ppm/degC - 40ppm/degC, modulus of 6GPa - 12GPa, were developed and evaluated on lead-free fine pitch flip chip packages. The results showed that an underfill with a middle range of Tg, a lower CTE and a moderate modulus enhances the device´s reliability and can pass JEDEC L3/260degC, 1000 cycle TCB without any underfill delamination. In addition, some common issues associated with advanced underfills, such as underfill voids, flow, flux compatibility, warpage, etc. will be discussed in this study.
Keywords
chip scale packaging; copper; flip-chip devices; low-k dielectric thin films; semiconductor device packaging; semiconductor device reliability; device reliability; dielectric materials; lead-free chip packages; low-k flip chip packages; underfill materials; Delamination; Dielectric materials; Environmentally friendly manufacturing techniques; Flip chip; Glass; Internal stresses; Packaging; Temperature; Thermal expansion; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 2009. ECTC 2009. 59th
Conference_Location
San Diego, CA
ISSN
0569-5503
Print_ISBN
978-1-4244-4475-5
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2009.5074267
Filename
5074267
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