Title :
Fabrication and photoluminescent properties of ZnO/ZnMgO quantum structure nanorods
Author :
Park, W.I. ; Yi, G.-C.
Author_Institution :
Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., South Korea
Abstract :
We report the epitaxial growth of ZnO/ZnMgO nanorod quantum structures and their structural and photoluminescent characteristics. The nanorod quantum structures grown using low pressure, metal-organic vapor phase epitaxy (MOVPE), exhibit uniform width and length distributions. Typical diameters and lengths of nanorods were in the range of 20-70 nm and 0.5-2 μm. During the nanorod growth, ZnO/ZnMgO superlattices with their periodic thicknesses of 46-145 Å were fabricated by depositing ZnO and ZnMgO layers alternatively. Furthermore, quantum confinement of carriers in the superlattice nanorods was observed using photoluminescence (PL) spectroscopy.
Keywords :
II-VI semiconductors; MOCVD; magnesium compounds; nanostructured materials; nanotechnology; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; semiconductor superlattices; vapour phase epitaxial growth; zinc compounds; 0.5 to 2 micron; 20 to 70 nm; 46 to 145 Å; MOVPE; PL spectroscopy; ZnO-ZnMgO; ZnO/ZnMgO epitaxial growth; ZnO/ZnMgO quantum structure nanorods; ZnO/ZnMgO superlattices; metal organic vapor phase epitaxy; nanorod growth; photoluminescence properties; photoluminescence spectroscopy; quantum confinement; superlattice nanorods; Epitaxial growth; Epitaxial layers; Fabrication; Materials science and technology; Nanoscale devices; Nanostructures; Nanowires; Potential well; Superlattices; Zinc oxide;
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
DOI :
10.1109/NANO.2003.1231794
