DocumentCode
2074635
Title
HEMT Control Circuits for Monolithic InP Applications
Author
Weiss, Matthias ; Pavlidis, Dinitris ; Ng, Geok Ing
Volume
1
fYear
1990
fDate
9-13 Sept. 1990
Firstpage
429
Lastpage
434
Abstract
InAlAs/InGaAs HEMT control circuits are studied for monolithic InP applications. Experimental characteristics are presented for bridged-, T-and ¿-topologies. Best performance is obtained for single-cell ¿-attenuators. (DC to 26.5 GHz with 30 dB dynamic range and ¿19 dB return loss). These excellent broadband characteristics benefit from the high electron mobility of the devices. Less than 1 nsec switching times were measured. Small-signal characteristics of the ¿-attenuator were maintained up to input-powers of about 11 dBm at 5 GHz. The technology merits and suitability for very high frequency applications are discussed.
Keywords
FETs; Frequency; Gain control; Gallium arsenide; Gold; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Monolithic integrated circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1990. 20th European
Conference_Location
Budapest, Hungary
Type
conf
DOI
10.1109/EUMA.1990.336081
Filename
4136038
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