Electronic transport studies and photo-detecting properties of indium oxide nanowires

Author

Lei, Bo ; Li, Chao ; Zhang, Daihua ; Zhou, Chongwu

Author_Institution

Dept. of Electr. Eng., Southern California Univ., Los Angeles, CA, USA

Volume

1

fYear

2003

fDate

12-14 Aug. 2003

Firstpage

406

Abstract

Single crystalline In₂O₃ nanowires were synthesized and then utilized to construct field effect transistors (FET) consisting of individual nanowires. These nanowire transistors exhibited nice n-type semiconductor characteristics with well-defined linear and saturation regimes, and on off ratios as high as 10⁴ were observed at room temperature. The temperature-dependence of the conductance revealed thermal emission as the dominating transport mechanism. Furthermore, photo-conducting properties of In₂O₃ nanowires were also studied. These nanowire transistors showed substantial increase in conductance and also significant shifts in the gate threshold voltage upon exposure to ultraviolet (UV) light.

Keywords

carrier mobility; field effect transistors; indium compounds; nanowires; photoconductivity; semiconductor materials; 293 to 298 K; FET; In₂O₃; Si-SiO₂; UV light; conductance; electronic transport; field effect transistors; gate threshold voltage shift; indium oxide nanowires; n-type semiconductor; nanowire transistors; photoconducting properties; photodetecting properties; room temperature; single crystalline In₂O₃ nanowires; temperature dependence; thermal emission; ultraviolet light; Crystallization; FETs; Indium; Nanoscale devices; Nanowires; Scanning electron microscopy; Substrates; Temperature; Threshold voltage; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on

Print_ISBN

0-7803-7976-4

Type

conf

DOI

10.1109/NANO.2003.1231804

Filename

1231804