Title :
Ohmic and Schottky nanocontacts on ZnO nanorods
Author :
Park, W.I. ; Yi, G.-C.
Author_Institution :
Dept. of Mater. Sci. & Eng., Pohang Inst. of Sci. & Technol., South Korea
Abstract :
We report on fabrication and electrical characteristics of metal/ZnO nanorod heterostructure arrays. The metal/ZnO nanorod heterostructures were fabricated simply by evaporating metal on vertically well-aligned ZnO nanorods prepared by non-catalytic metalorganic vapor phase epitaxy (MOVPE). Transmission electron microscopy revealed that the metal/ZnO nanorod heterostructures exhibit an atomically sharp interface between ZnO and metal layers. Furthermore, electrical junction properties of the heterostructures were investigated using conducting probe atomic force microscopy. The electrical measurements of metal/ZnO heterostructure nanorod arrays exhibited either linear or rectifying I-V characteristic curves, depending on the metal deposited on ZnO nanorods.
Keywords :
II-VI semiconductors; Schottky barriers; atomic force microscopy; gold; nanocontacts; nanostructured materials; ohmic contacts; semiconductor-metal boundaries; transmission electron microscopy; vapour deposited coatings; zinc compounds; Au-ZnO; I-V characteristic curves; MOVPE; Schottky nanocontacts; ZnO nanorods; ZnO-metal layer interface; conducting probe atomic force microscopy; electrical junction properties; evaporating metal; metal/ZnO nanorod heterostructure arrays; noncatalytic metalorganic vapor phase epitaxy; ohmic nanocontacts; transmission electron microscopy; Atomic force microscopy; Atomic layer deposition; Atomic measurements; Electric variables; Electrons; Epitaxial growth; Epitaxial layers; Fabrication; Nanocontacts; Zinc oxide;
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
DOI :
10.1109/NANO.2003.1231805
