Simulation of the measurement by scanning electron microscopy of edge and linewidth roughness parameters in nanostructures

Author

Ciappa, Mauro ; Ilgunsatiroglu, Emre ; Illarionov, Alexey Yu

Author_Institution

Integrated Syst. Lab., ETH Zurich, Zurich, Switzerland

fYear

2015

fDate

26-28 Jan. 2015

Firstpage

205

Lastpage

208

Abstract

Uncertainties in the sub-nanometer range, the use of new materials, roughness, and the three-dimensional structures represent main challenges for the metrology of critical dimensions in nanostructures. In this paper, realistic PMMA lines in the 40nm range are generated by full 3D process simulation and the corresponding secondary electron SEM image is obtained by Monte Carlo simulation. Line Edge and Line Width Roughness parameters are extracted from the simulated SEM image and compared with the parameters obtained from the true geometry.

Keywords

Monte Carlo methods; nanoelectronics; nanostructured materials; photoresists; scanning electron microscopy; surface topography measurement; 3D process simulation; Monte Carlo simulation; SEM image; edge roughness parameter; linewidth roughness parameter; measurement simulation; nanometer-scale device; nanostructure; photoresist; realistic PMMA line; scanning electron microscopy; size 40 nm; subnanometer range; three-dimensional structure; Correlation; Geometry; Image edge detection; Numerical analysis; Scanning electron microscopy; Solid modeling; Three-dimensional displays; Critical Dimensions; Line Edge Roughness; Metrology; Monte Carlo Modeling; Scanning Electron Microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on

Conference_Location

Bologna

Type

conf

DOI

10.1109/ULIS.2015.7063749

Filename

7063749