Performance estimation of molecular crossbar architecture considering capacitive and inductive coupling between interconnects

Author

Raychowdhury, Arijit ; Roy, Kaushik

Author_Institution

Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

1

fYear

2003

fDate

12-14 Aug. 2003

Firstpage

445

Abstract

Scaling silicon MOSFETs beyond the 10 nm regime has posed challenges to device and circuit engineers. Research has begun in the earnest to find possible replacements for silicon. Molecular devices are being extensively studied and their electrical characteristics are being measured. Crossbar architecture in such nanoscale devices has lately gained tremendous popularity. This paper examines the issue of interconnect parasitics in such molecular crossbar architectures.

Keywords

capacitance; electric resistance; integrated circuit interconnections; molecular electronics; nanotechnology; semiconductor device models; capacitive coupling; electrical properties; inductive coupling; interconnect parasitics; molecular crossbar architecture; molecular devices; nanoscale devices; performance estimation; scaling silicon MOSFET; Computer architecture; Coupling circuits; Inductance; Integrated circuit interconnections; Logic arrays; Read only memory; Routing; Silicon; Switches; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on

Print_ISBN

0-7803-7976-4

Type

conf

DOI

10.1109/NANO.2003.1231814

Filename

1231814