Title :
Analytical approach to consider Gaussian junction profiles in compact models of tunnel-FETs
Author :
Graef, Michael ; Hain, Franziska ; Hosenfeld, Fabian ; Iniguez, Benjamin ; Kloes, Alexander
Author_Institution :
Competence Centre for Nanotechnol. & Photonics, Tech. Hochschule Mittelhessen, Giessen, Germany
Abstract :
The impact of Gaussian-shaped doping-profiles on the potential and the current transfer characteristics of an Double-Gate (DG) Tunnel-FET (TFET) is investigated in this paper. Based on results of the analysis, a simple model by solving Poisson´s equation is developed. The model is able to calculate the potential difference in the channel region caused by the applied doping gradient. Considering the modifications in the two-dimensional (2D) potential profile the band-to-band (B2B) and trap-assisted-tunneling (TAT) current are calculated with help of Wentzel-Kramers-Brillouin (WKB) approximation and Landauer transmission theory. The results are validated by comparison with TCAD simulation data.
Keywords :
Poisson equation; approximation theory; doping profiles; semiconductor device models; semiconductor doping; semiconductor junctions; tunnel transistors; 2D potential profile; Gaussian junction profile; Gaussian-shaped doping-profiles; Landauer transmission theory; Poisson equation; TCAD simulation data; WKB approximation; Wentzel-Kramers-Brillouin approximation; band-to-band current; channel region; compact tunnel-FET model; current transfer characteristics; doping gradient; double-gate TFET; double-gate tunnel-FET; trap-assisted-tunneling current; Analytical models; Data models; Doping; Electric potential; Logic gates; Semiconductor process modeling; Standards; 2D Potential; Analytical Modeling; Double-Gate (DG) Tunnel-FET; Gaussian Doping Profile; ID Poisson;
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063751
