• DocumentCode
    2075351
  • Title

    A new latch-free LIGBT on SOI

  • Author

    Olsson, J. ; Vestling, L. ; Eklund, K.-H.

  • Author_Institution
    Angstrom Lab., Uppsala Univ., Uppsala, Sweden
  • fYear
    2015
  • fDate
    26-28 Jan. 2015
  • Firstpage
    33
  • Lastpage
    36
  • Abstract
    A new latch-free LIGBT on SOI is presented. The new device combines advantages from both LDMOS as well as LIGBT technologies; high breakdown voltage, high drive current density, low control voltages, at the same time eliminating latch-up problems. Breakdown voltage of over 200 V, on-state current density over 3 A/mm and latch-free operation is demonstrated.
  • Keywords
    MOS integrated circuits; electric breakdown; insulated gate bipolar transistors; silicon-on-insulator; LDMOS; SOI; high breakdown voltage; high drive current density; latch-free LIGBT; low control voltages; Anodes; Current density; Logic gates; MOSFET; Performance evaluation; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
  • Conference_Location
    Bologna
  • Type

    conf

  • DOI
    10.1109/ULIS.2015.7063766
  • Filename
    7063766
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2075351