DocumentCode :
2075375
Title :
Experimental and Theoretical Analysis of Photocurrents in GaAs MESFETs Operated in Normally off Mode
Author :
Madjar, Asher ; Herczfeld, Peter R. ; Paollela, Arthur
Author_Institution :
Center for Microwave-Lightwave Engineering, Drexel University, Philadelphia, PA 19104
Volume :
1
fYear :
1990
fDate :
9-13 Sept. 1990
Firstpage :
584
Lastpage :
589
Abstract :
Optical control of microwave devices, particularly MMIC, is a rapidly growing research area. This paper presents a theoretical analysis, which accurately predicts the photocurrents of MESFETs operated in normally OFF mode. The model accounts for the variation of the intensity and wavelength of the incident light. The analysis includes both photovoltaic and photoconductive effects. The photocurrent in the semi-insulating substrate under the gate depletion region is considered. The leakage current between the drain and source bonding pads via the substrate is also included in the model. Good agreement is realized between measured and calculated results. The model can be used as a tool for the optimal design of MESFET optical detectors.
Keywords :
Bonding; Gallium arsenide; Leakage current; MESFETs; MMICs; Microwave devices; Optical control; Photoconductivity; Photovoltaic systems; Solar power generation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1990. 20th European
Conference_Location :
Budapest, Hungary
Type :
conf
DOI :
10.1109/EUMA.1990.336106
Filename :
4136063
Link To Document :
بازگشت