Title :
Fully depleted SOI: Achievements and future developments
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
This paper presents the main recent achievements of the UTBB-FDSOI technology. It shows some of the power advantages of the 28nm technology node today used for production. It details the 14nm nodemain features with the first generation of boosters. It finally indicates some technology bricks under development for the 10 nm generation.
Keywords :
elemental semiconductors; semiconductor technology; silicon-on-insulator; UTBB-FDSOI technology; fully-depleted SOI; power advantages; size 10 nm; size 14 nm; size 28 nm; technology bricks; ultrathin body-box-fully-depleted silicon-on-insulator; CMOS integrated circuits; Films; Logic gates; MOS devices; Performance evaluation; Silicon; Silicon germanium; Fully depleted devices; forward biasing; strain silicon;
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063767
