Experimental investigations of SiGe channels for enhancing the SGOI tunnel FETs performance

Author

Le Royer, C. ; Villalon, A. ; Martinie, S. ; Nguyen, P. ; Barraud, S. ; Glowacki, F. ; Cristoloveanu, S. ; Vinet, M.

Author_Institution

LETI, CEA, Grenoble, France

fYear

2015

fDate

26-28 Jan. 2015

Firstpage

69

Lastpage

72

Abstract

We report the fabrication and the characterization of Tunnel FETs fabricated on SiGe-On-Insulator with a High K Metal Gate (HKMG) CMOS process. The beneficial impact of low band gap SiGe channel on I_D(V_G) characteristics is presented and analyzed: compressive Si_0.75Ge_0.25 enables to increase by a factor of 20 the saturation currents, even at small gate length (L_G=50nm). This large gain is due to the threshold voltage shift and to enhanced intrinsic band-to-band tunneling injection (both related to the narrow band gap of SiGe channels).

Keywords

CMOS integrated circuits; Ge-Si alloys; field effect transistors; high-k dielectric thin films; tunnel transistors; HKMG CMOS process; SGOI tunnel FET; SiGe; SiGe channels; SiGe-on-insulator; high k metal gate CMOS process; intrinsic band-to-band tunneling injection; low band gap SiGe channel; saturation currents; threshold voltage shift; Logic gates; MOSFET; Photonic band gap; Silicon; Silicon germanium; Threshold voltage; ION; SGOI; SOI; SS; SiGe; TFET; Tunnel FET;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on

Conference_Location

Bologna

Type

conf

DOI

10.1109/ULIS.2015.7063775

Filename

7063775