New mechanism of nanosized InAs grains formation on porous silicon surface

Author

Leonov, Ilya A. ; Sokolov, L.V. ; Preobrazhenskii, V.V. ; Semyagin, B.R. ; Putyato, M.A. ; Zakharov, N.D. ; Romanov, S.I. ; Volodin, V.V. ; Kolesnikov, A.V. ; Pchelyakov, Oleg P.

Author_Institution

Inst. of Semicond. Phys., Novosibirsk, Russia

Volume

1

fYear

2002

fDate

1-5 July 2002

Abstract

Combination A^IIIB^V direct-band semiconductor materials with silicon is the way to create light-emitting devices on silicon basis. In present paper was made an attempt to obtain InAs nanocrystals inside the porous silicon (PS) channels by means of molecular-beam epitaxy (MBE). InAs grows provided in A^IIIB^V MBE reactor on silicon substrate with porous layer. Porous silicon substrate was formed through electrochemical etching, general porosity was ∼55%, porous layer thickness 500 nm and average pore size 10-13 nm.

Keywords

III-V semiconductors; etching; indium compounds; interface structure; molecular beam epitaxial growth; nanoparticles; porous semiconductors; silicon; 10 to 13 nm; 500 nm; InAs-Si; direct-band semiconductor materials; electrochemical etching; light-emitting devices; molecular-beam epitaxy; nanosized grains formation; porous silicon surface; Crystalline materials; Electrons; Geometry; Molecular beam epitaxial growth; Physics; Raman scattering; Silicon; Spectroscopy; Substrates; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2002. Proceedings. 3rd Annual 2002 Siberian Russian Workshop on

Print_ISBN

5-7782-0380-2

Type

conf

DOI

10.1109/SREDM.2002.1024307

Filename

1024307