Investigation of 2D transition metal dichalcogenide films for electronic devices

The reduction of dimensionality has revealed exciting properties in layered 2D materials such as graphene and transition metal dichalcogenides (TMDs). In order to use these materials in functional devices, processes for reliable large scale synthesis, functionalization and integration must be developed. Here we present the thermally assisted conversion of various TMD layers. The sulfides and selenides of Mo and W have been produced on silicon chips. These films have been characterized thoroughly and electrically addressed. Furthermore, we report on CVD growth of MoS₂ and WS₂ monolayers in a microreactor setup. Besides transistor applications, TMDs can be used for other electronic applications such as chemical sensors and photodiodes. Integrating novel 2D materials with silicon technology may lead to significant advances toward a wide range of novel devices.