Title :
Spectral sensitivity of a graphene/silicon pn-junction photodetector
Author :
Riazimehr, Sarah ; Schneider, Daniel ; Yim, Chanyoung ; Kataria, Satender ; Passi, Vikram ; Bablich, Andreas ; Duesberg, Georg S. ; Lemme, Max C.
Author_Institution :
Sch. of Sci. & Technol., Univ. of Siegen, Siegen, Germany
Abstract :
We investigate the optical properties of graphene-silicon Schottky barrier diodes composed of chemical vapor deposited (CVD) graphene on n- and p-type silicon (Si) substrates. The diodes fabricated on n-Si substrate exhibit better rectifying behavior compared to p-Si devices in the dark. An ultra-broadband spectral response is achieved for n-Si diodes. The results are compared with the spectral response of a molybdenum disulfide (MoS2) - p-type silicon photodiode.
Keywords :
Schottky diodes; chemical vapour deposition; graphene devices; molybdenum compounds; optical properties; photodetectors; photodiodes; silicon; C-Si; CVD; MoS2; Si; chemical vapor deposition; graphene-silicon Schottky barrier diodes; graphene-silicon pn-junction photodetector; molybdenum disulfide; n-type silicon substrates; optical properties; p-type silicon photodiode; p-type silicon substrates; rectifying behavior; spectral sensitivity; ultrabroadband spectral response; Graphene; Photodiodes; Schottky barriers; Schottky diodes; Silicon; Substrates; Schottky barrier diode; graphene; molybdenum disulfide; photodiode; sensitivity; spectral response;
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063777
