Impact of hot carrier stress on the defect density and mobility in double-gated graphene field-effect transistors

Author

Illarionov, Yu.Yu. ; Waltl, M. ; Smith, A.D. ; Vaziri, S. ; Ostling, M. ; Lemme, M.C. ; Crasser, T.

Author_Institution

Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria

fYear

2015

fDate

26-28 Jan. 2015

Firstpage

81

Lastpage

84

Abstract

We study the impact of hot-carrier degradation (HCD) on the performance of graphene field-effect transistors (GFETs) for different polarities of HC and bias stress. Our results show that the impact of HCD consists in a change of both charged defect density and carrier mobility. At the same time, the mobility degradation agrees with an attractive/repulsive scattering asymmetry and can be understood based on the analysis of the defect density variation.

Keywords

carrier mobility; field effect transistors; graphene devices; hot carriers; C; GFET; HCD; attractive-repulsive scattering asymmetry; bias stress; carrier mobility; charged defect density; defect mobility; double-gated graphene field-effect transistors; hot carrier degradation; hot carrier stress; mobility degradation; Degradation; Graphene; Logic gates; Reliability; Scattering; Stress; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on

Conference_Location

Bologna

Type

conf

DOI

10.1109/ULIS.2015.7063778

Filename

7063778