Title :
Advanced ATM-layer function MCM-D module for ATM wide-area network
Author :
Kawamura, Tomoaki ; Yamanaka, Naoaki ; Kaizu, Katsumi
Author_Institution :
NTT Network Service Syst. Labs., Tokyo, Japan
Abstract :
This paper describes a high-performance and cost-effective MCM-D module for an ATM-layer function device. The MCM-D module is fabricated on a Si-substrate using the stacking RAM technique to reduce module size. The MCM has a 4-layer Si substrate, a high-performance ASIC, 8 high-speed SRAMs, and an FPGA. By using the stacking RAM technique, MCM-D module size was reduced to 50.8 mm×50.8 mm. This is 40% of that (100 mm×65 mm) of a double-side mounted sub-board module with conventional packaging (QFP and SOP). The MCM-D module realizes the ATM-layer functions that require a high-performance ASIC with high-speed (access time 20 ns) and large-capacity (1 MBytes) SRAM cache. The MCM approach is quite effective in increasing memory access speed because it realizes high-density packaging. The MCM-D module was mounted on an ATM line interface circuit, and realized 150 Mbit/s throughput ATM-layer functions (header conversion and on-line monitoring) in an ATM switching system. In addition, advanced ATM-WAN (wide-area network) switching system hardware technologies with sub-module structure are also described. The MCM-D module is one of the sub-modules of the system. This MCM technology and sub-module technology can be applied to ATM-WAN switching systems and future B-ISDN ATM switching systems
Keywords :
SRAM chips; application specific integrated circuits; asynchronous transfer mode; electronic switching systems; field programmable gate arrays; multichip modules; wide area networks; 1 Mbyte; 150 Mbit/s; 20 ns; 4-layer Si substrate; 50.8 mm; ATM line interface circuit; ATM switching system; ATM wide-area network; ATM-WAN switching system hardware technologies; ATM-layer function device; FPGA; MCM-D module; Si; Si-substrate; header conversion; high-density packaging; high-performance ASIC; high-performance cost-effective module; high-speed SRAMs; large-capacity SRAM cache; memory access speed; on-line monitoring; stacking RAM technique; Application specific integrated circuits; Asynchronous transfer mode; Electronics packaging; Field programmable gate arrays; Monitoring; Random access memory; Read-write memory; Stacking; Switching systems; Throughput;
Conference_Titel :
Electronic Components and Technology Conference, 1997. Proceedings., 47th
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-3857-X
DOI :
10.1109/ECTC.1997.606213