Towards amplifier design with a SiC graphene field-effect transistor

Author

Aguirre-Morales, J.D. ; Fregonese, S. ; Dwivedi, A.D.D. ; Zimmer, T. ; Khenissa, M.S. ; Belhaj, M.M. ; Happy, H.

Author_Institution

IMS Lab., Univ. of Bordeaux., Talence, France

fYear

2015

fDate

26-28 Jan. 2015

Firstpage

93

Lastpage

96

Abstract

A power amplifier is implemented using a SiC Graphene Field-Effect Transistor. The amplifier gain is enhanced using an input matching LC circuit, which is connected to the GFET through standard RF probes. Experimental measurements and ADS-simulation based on developed models are used for the evaluation of the performances of the SiC GFET-based amplifier. It has been shown that a power gain of 4.8 dB can be achieved at 2.4 GHz using the GFET and the matching circuit assembly. Technology parameters are studied towards the improvement of the amplifier´s figures of merit.

Keywords

LC circuits; graphene devices; power amplifiers; power field effect transistors; silicon compounds; wide band gap semiconductors; ADS-simulation; GFET-based amplifier; RF probes; SiC; frequency 2.4 GHz; gain 4.8 dB; graphene field-effect transistor; input matching LC circuit; power amplifier gain; Frequency measurement; Gain; Graphene; Integrated circuit modeling; Probes; Scattering parameters; Silicon carbide; Amplifier; Compact Model; Field-Effect Transistor; Graphene; SiC;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on

Conference_Location

Bologna

Type

conf

DOI

10.1109/ULIS.2015.7063781

Filename

7063781