Title :
Drift-diffusion simulation without Einstein relation
Author :
Bufler, F.M. ; Erlebach, A. ; Wettstein, A.
Author_Institution :
Inst. fur Integrierte Syst., ETH Zurich, Zürich, Switzerland
Abstract :
We suggest that the overestimation of the linear current in nanoscale devices by the standard drift-diffusion (DD) model is due to approximating the diffusivity by the Einstein relation. Using instead in DD simulation the field-dependent diffusivity from bulk Monte Carlo (MC) simulation is shown to remove this overestimation compared to MC device simulation of 1D nin-structures. This new approach has the potential to increase significantly the accuracy of DD simulation of short-channel devices.
Keywords :
Monte Carlo methods; semiconductor device models; 1D nin-structures; MC device simulation; bulk MC simulation; bulk Monte Carlo simulation; drift-diffusion simulation; field-dependent diffusivity; linear current overestimation; nanoscale devices; short-channel devices; standard DD model; standard drift-diffusion model; Calibration; Computational modeling; Mathematical model; Monte Carlo methods; Semiconductor device modeling; Silicon; Standards;
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063785
