• DocumentCode
    2075802
  • Title

    Al2O3/InGaAs interface study on MOS capacitors for a 300mm process integration

  • Author

    Billaud, M. ; Duvernay, J. ; Grampeix, H. ; Pelissier, B. ; Martin, M. ; Baron, T. ; Boutry, H. ; Chalupa, Z. ; Casse, M. ; Ernst, T. ; Vinet, M.

  • Author_Institution
    LTM, Univ. Grenoble Alpes, Grenoble, France
  • fYear
    2015
  • fDate
    26-28 Jan. 2015
  • Firstpage
    113
  • Lastpage
    116
  • Abstract
    Al2O3/InGaAs interface has been studied and optimized for a 300mm compatible process. XPS analysis and electrical measurements of MOS capacitors revealed that a NH4OH treatment associated with TMA precursor pulse before the ALD deposition is efficient to remove InGaAs oxides. This yields to a good Al2O3/InGaAs interface quality with a low Dit value (~3×1012 cm-2eV-1), and passivated border traps.
  • Keywords
    III-V semiconductors; MOS capacitors; X-ray photoelectron spectra; alumina; electron traps; gallium arsenide; indium compounds; interface states; interface structure; semiconductor-insulator boundaries; surface treatment; ALD deposition; Al2O3-InGaAs; MOS capacitors; NH4OH; TMA precursor pulse; XPS analysis; passivated border traps; Aluminum oxide; Dielectrics; Indium gallium arsenide; Logic gates; Passivation; Substrates; InGaAs; border traps; capacitors; high-k; oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
  • Conference_Location
    Bologna
  • Type

    conf

  • DOI
    10.1109/ULIS.2015.7063786
  • Filename
    7063786
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2075802