On the enhancement of electron mobility in ultra-thin (111)-oriented In0.53Ga0.47As channels

Electron mobility is investigated in sub-20 nm-thick InGaAs channels using self-consistent numerical simulations. Effects of body thickness downscaling [down to 2 nm] and surface orientation [(100) and (111)] are examined by including all electron valleys and all relevant scattering mechanisms. We report that ultra-thin (111) InGaAs channels offer greater electron mobility than (100) devices down to 2 nm. Furthermore, ultra-thin (100) InGaAs devices outperform SOI for body thicknesses above 3.2 nm, while (111) InGaAs channels are superior to SOI irrespective of the body thickness.