DocumentCode
2075833
Title
The 3D-model of anisotropic conductivity in the strained n-silicon
Author
Konovalov, Anton A. ; Makarov, Evgeny A.
Author_Institution
Novosibirsk State Tech. Univ., Russia
Volume
1
fYear
2002
fDate
1-5 July 2002
Abstract
In paper the outcomes of 3-dimensional simulation of an anisotropic electrical conductivity originating at deformation of n-silicon are reduced. Is shown, that the application of the space 19-dot template of digitization allows to take into account changes x-, y-, and z-components of field strength in all three space directions. As an example the dependences of an output voltage transversal sensor of a unit from monoaxial mechanical power are presented.
Keywords
electric sensing devices; electrical conductivity; silicon; tensors; voltage measurement; 3D model; anisotropic electrical conductivity; field strength; monoaxial mechanical power; output voltage transversal sensor; strained n-silicon; Anisotropic magnetoresistance; Conductivity; Couplings; Effective mass; Laplace equations; Mechanical sensors; Silicon; Tellurium; Tensile stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2002. Proceedings. 3rd Annual 2002 Siberian Russian Workshop on
Print_ISBN
5-7782-0380-2
Type
conf
DOI
10.1109/SREDM.2002.1024315
Filename
1024315
Link To Document