Efficient quantum mechanical simulation of band-to-band tunneling

Author

Alper, Cem ; Palestri, Pierpaolo ; Padilla, Jose L. ; Gnudi, Antonio ; Grassi, Roberto ; Gnani, Elena ; Luisier, Mathieu ; Ionescu, Adrian M.

Author_Institution

NANOLAB, Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland

fYear

2015

fDate

26-28 Jan. 2015

Firstpage

141

Lastpage

144

Abstract

In this work, we extend an already existing simulator for tunnel FETs to fully take into account nonparabolicity (NP) of the conduction band in all aspects, namely the wave-function (WF) and density of states (DOS) corrections for both charge and BTBT current calculation. Comparison against more advanced full-quantum simulators based on TB and k ·p Hamiltonians is presented as well and indicates very good matching between models for simple tunnel diodes. An initial parameter study of the Electron Hole Bilayer TFET (EHBTFET) indicates the presence of an optimum channel thickness, determined by the interplay between the subband alignment voltage and ON current level.

Keywords

field effect transistors; quantum theory; semiconductor device models; tunnel diodes; tunnel transistors; BTBT current calculation; EHBTFET; band-to-band tunneling; conduction band; density of states corrections; electron hole bilayer TFET; k ·p Hamiltonians; nonparabolicity; optimum channel thickness; quantum mechanical simulation; simple tunnel diodes; tunnel FET; wavefunction; Approximation methods; Biological system modeling; Charge carrier processes; Logic gates; Silicon; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on

Conference_Location

Bologna

Type

conf

DOI

10.1109/ULIS.2015.7063793

Filename

7063793