Nanostructuring of silicon surface with near-field enhanced in femtosecond laser ablation

This paper reports an experimental study of nanostructuring of Si surface that has been made to demonstrate the applicability of our model based on the near-field and SPPs to the semiconductor material. The target was the crystalline Si substrate of 300 μm in thickness, which was placed in a small cell filled with distilled water. We used linearly polarized, 800 nm, 100 fs laser pulses from a Ti:sapphire laser system operated at 10 Hz. The fs laser pulses were focused on the target with a 1000-mm focal length lens, through the water layer of 2 mm thickness and a quartz window of the cell.