Title :
Influence of radiation on current-voltage characteristics of CaF2/Si heterostructures
Author :
Baranov, Alexander V. ; Ushin, Vladimir A Il ; Velichko, Alexander A. ; Philimonova, Nina I.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
Structures Al/CaF2/Si has been grown by method of the molecular-beam epitaxy (MBE) with thickness of film CaF2 from 0.1 up to 0.5 μm. Current-voltage characteristic (CVC) of Al/CaF2/Si structures before and after influence of radiation has been presented. It has been shown that the radiation has increased a current, but has not changed the mechanism of conductivity.
Keywords :
MIS structures; gamma-ray effects; molecular beam epitaxial growth; semiconductor-insulator boundaries; 0.1 to 0.5 micron; Al-CaF2-Si; conductivity mechanism; current-voltage characteristics; molecular-beam epitaxy; radiation influence; Calcium; Conductivity; Current measurement; Dielectrics; Electrical resistance measurement; Lattices; Molecular beam epitaxial growth; Silicon; Temperature; Voltage;
Conference_Titel :
Electron Devices and Materials, 2002. Proceedings. 3rd Annual 2002 Siberian Russian Workshop on
Print_ISBN :
5-7782-0380-2
DOI :
10.1109/SREDM.2002.1024323
