Title :
Reverse terrace graded Si1−xGex/Ge/Si(001) virtual substrates grown using RP-CVD on on-axis and 6° off-axis substrates for future developments in III-V materials integration
Author :
Sivadasan, Vineet ; Myronov, Maksym ; Rhead, Stephen ; Halpin, John ; Leadley, David
Author_Institution :
Dept. of Phys., Univ. of Warwick, Coventry, UK
Abstract :
Reverse terrace graded (RTG) Si1-xGex/Ge relaxed buffer layers grown on Si(001) substrates that are oriented on-axis and off-axis (6° toward the [110] direction) show similar levels of strain, surface roughness and threading dislocation density (TDD) to Ge and Si1-xGex epilayers of similar thickness and Ge content. For identical growth conditions and times, a reduced growth rate is observed for buffer layers on off-axis substrates; which leads to thinner layers. The findings in this article contradict previous reports for relaxed Ge buffer layers grown on 6° off-axis Si(001) substrates [1].
Keywords :
Ge-Si alloys; buffer layers; chemical vapour deposition; dislocation density; elemental semiconductors; epitaxial growth; germanium; semiconductor epitaxial layers; silicon; surface roughness; Si(001) substrate; Si1-xGex-Ge-Si; epilayers; off-axis orientation; on-axis orientation; reverse terrace graded relaxed buffer layer growth; surface roughness; threading dislocation density; Buffer layers; Lattices; Rough surfaces; Silicon; Strain; Substrates; Surface roughness;
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063801
