DocumentCode
2076294
Title
Low frequency noise statistical characterization of 14nm FDSOI technology node
Author
Ioannidis, E.G. ; Theodorou, C.G. ; Haendler, S. ; Joo, M.-K. ; Josse, E. ; Dimitriadis, C.A. ; Ghibaudo, G.
Author_Institution
IMEP-LAHC, INPG, Grenoble, France
fYear
2015
fDate
26-28 Jan. 2015
Firstpage
181
Lastpage
184
Abstract
In this paper, we performed a statistical analysis of the low-frequency noise (LFN) in 14nm FDSOI n-MOS devices. Front and back gate interfaces were characterized, revealing an equal contribution to the total noise level. Finally, the LFN variability is analyzed and a comparison to previous CMOS technologies is presented.
Keywords
CMOS integrated circuits; MOSFET; elemental semiconductors; semiconductor device noise; silicon; silicon-on-insulator; CMOS technologies; FDSOI n-MOS devices; FDSOI technology node; LFN; Si; fully depleted silicon-on-insulator; low frequency noise; size 14 nm; CMOS integrated circuits; CMOS technology; Logic gates; Low-frequency noise; MOSFET; Performance evaluation; CMOS; Low-frequency Noise; characterization;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location
Bologna
Type
conf
DOI
10.1109/ULIS.2015.7063803
Filename
7063803
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