Title :
Temperature and process invariant MOS-based reference current generation circuits for sub-1V operation
Author :
Tang, Stephen ; Narendra, Siva ; De, Vivek
Author_Institution :
Microprocessor Res., Intel Corp., Hillsboro, OR, USA
Abstract :
Measurements on a prototype chip, implemented in a 150 nm logic process technology, validate the theories for two sub-1V MOS reference current generator circuits and show that ∼2× reduction in current variation is achievable across extremes of both process and temperature.
Keywords :
CMOS analogue integrated circuits; constant current sources; high-temperature electronics; integrated circuit design; low-power electronics; reference circuits; 0.64 V; 150 nm; 150 nm logic process technology; 40 to 110 C; MOS-based reference current generation circuits; bandgap reference; current variation reduction; fixed-voltage technique; low-voltage deep-submicron CMOS technologies; process compensation; process invariance; prototype chip; scaled-VTO technique; sub-1V operation; temperature compensation; temperature invariance; CMOS process; CMOS technology; Integrated circuit measurements; Integrated circuit technology; Microprocessors; Prototypes; Resistors; Semiconductor device measurement; Temperature; Threshold voltage;
Conference_Titel :
Low Power Electronics and Design, 2003. ISLPED '03. Proceedings of the 2003 International Symposium on
Print_ISBN :
1-58113-682-X
DOI :
10.1109/LPE.2003.1231862
