A simulation study of short channel effects with a QET model based on Fermi-Dirac statistics for Si, Ge and III-V MOSFETs

Author

Sho, Shohiro ; Odanaka, Shinji ; Hiroki, Akira

Author_Institution

Comput. Assisted Sci. Div., Osaka Univ., Suita, Japan

fYear

2015

fDate

26-28 Jan. 2015

Firstpage

229

Lastpage

232

Abstract

In this paper, the quantum confinement and short channel effects of Si, Ge, and In_0.53Ga_0.47As n-MOSFETs are evaluated using a quantum energy transport(QET) model based on Fermi-Dirac statistics. Both bulk and double-gate n-MOSFETs are simulated. The charge control by the gate is strongly reduced in In_0.53Ga_0.47As bulk n-MOSFETs due to low effective mass, high permittivity and high degeneracy material. This results in the degradation of short channel effects. The double-gate structure is effective in the suppression of short channel effects for Si and Ge n-MOSFETs. In In_0.53Ga_0.47As n-MOSFETs, the improvement of subthreshold slope by the double-gate structure is decreased due to the high degeneracy material.

Keywords

III-V semiconductors; MOSFET; elemental semiconductors; fermion systems; gallium arsenide; germanium; indium compounds; quantum statistical mechanics; silicon; Fermi-Dirac statistics; Ge; III-V MOSFET; In_0.53Ga_0.47As; QET model; Si; bulk n-MOSFET; charge control; double-gate n-MOSFET; high degeneracy material; quantum confinement; quantum energy transport model; short channel effects simulation; subthreshold slope; Logic gates; MOSFET; MOSFET circuits; Numerical models; Semiconductor device modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on

Conference_Location

Bologna

Type

conf

DOI

10.1109/ULIS.2015.7063815

Filename

7063815