Title :
Comparison between vertical silicon NW-TFET and NW-MOSFETfrom analog point of view
Author :
Agopian, P.G.D. ; Martino, J.A. ; Vandooren, A. ; Rooyackers, R. ; Simoen, E. ; Thean, A. ; Claeys, C.
Author_Institution :
Univ. of Sao Paulo, Sao Paulo, Brazil
Abstract :
In this work a comparison of the analog performance between vertical silicon Nanowires Tunnel Field Effect Transistors (NW-TFETs) and nanowires MOSFETs (NW-MOSFETs) is performed mainly focusing on the basic analog characteristics at room and high temperatures for the first time. The opposite transconductance trend as a function of temperature and the much lower (better) output conductance obtained for NW-TFETs when compared to NW-MOSFETs contribute to an important improvement of the intrinsic voltage gain, making the NW-TFETs a good alternative for analog applications.
Keywords :
MOSFET; elemental semiconductors; field effect transistors; nanowires; silicon; NW-MOSFET; NW-TFET; Si; nanowires MOSFET; nanowires tunnel field effect transistors; temperature 293 K to 298 K; Logic gates; MOSFET; MOSFET circuits; Nanowires; Temperature; Transconductance; Tunneling; Tunnel field-effect transistor; analog application; vertical nanowire;
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063816
