Static and low frequency noise characterization in standard and rotated UTBOX nMOSFETs

Author

Cretu, B. ; Simoen, E. ; Routoure, J.-M. ; Carin, R. ; Aoulaiche, M. ; Claeys, C.

Author_Institution

ENSICAEN, Caen, France

fYear

2015

fDate

26-28 Jan. 2015

Firstpage

237

Lastpage

240

Abstract

In this work, the static and low frequency noise characterization of standard and rotated UTBOX n - type transistors is reported. The main short channel effects and analog parameters are studied in order to investigate the impact of the channel orientation: <;110> versus <;100>. In addition to the improvement on the electrical properties for the rotated - channel devices, the 1/f noise level is found to be quite similar for long - channel devices for both rotated and standard channel transistors. Low frequency noise spectroscopy is also used as a diagnostic tool in order to identify traps in the Si film.

Keywords

1/f noise; MOSFET; buried layers; elemental semiconductors; semiconductor device noise; semiconductor thin films; silicon; 1/f noise level; Si; analog parameters; channel orientation; electrical property; long-channel devices; low frequency noise characterization; low frequency noise spectroscopy; n-type transistors; rotated UTBOX nMOSFET; short channel effects; silicon film; standard channel transistors; Logic gates; Low-frequency noise; Mathematical model; Silicon; Standards; Transistors; Voltage measurement; UTBOX; analog parameters; low frequecy noise spectroscopy; low frequency noise; short channel effects;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on

Conference_Location

Bologna

Type

conf

DOI

10.1109/ULIS.2015.7063817

Filename

7063817