Improvement and Design 1R PoRAM with Read/Write/Erase Operation

Polymer random access memory is a next-generation nonvolatile memory device possessing two stable states of which their respective resistances differ by more than a factor of 100. This memory device is easy to integrated and mass produce because it has a sandwich-like One-Resister structure forming a cross-point cell array. The previous cell array structure makes it difficult to read data correctly because of current interference between cells. In this paper, to solve these problems, a new cell array called a ldquorow chain cell arrayrdquo is suggested that does not produce current interference. To the multi-cell read data, especially we have adjusted this structure. They are verified by simulation. Furthermore, to write/erase data, we propose a new architecture and verify that the required voltages are applied to the selected cell.