Title :
A study on the characteristics of TiN thin films deposited by DC pulsed PA-MOCVD
Author :
Park, Yong-Gyun ; Lee, Young-Seop ; Lee, Tae-Soo ; Lee, Sung-Jae ; Chun, Hui-Gon ; Cho, Tong-Yul
Author_Institution :
Sch. of Mater. Sci. & Metall. Eng., Ulsan Univ., South Korea
fDate :
26 Jun-3 Jul 2001
Abstract :
The TiN thin films were prepared using Ti precursor, tetrakis(diethylamido)titanium and ammonia on 300 nm SiO2 by DC pulsed PA-MOCVD. The characteristics of TiN thin films had been studied by XRD, AFM, FE-SEM analyses and sheet resistance
Keywords :
MOCVD; MOCVD coatings; X-ray diffraction; atomic force microscopy; diffusion barriers; electric resistance; field emission electron microscopy; grain size; plasma CVD; plasma CVD coatings; scanning electron microscopy; surface topography; thin films; titanium compounds; wear resistant coatings; AFM; DC pulsed plasma assisted-MOCVD; TiN; XRD; crystallinity; deposition rate; diffusion barrier materials; duty ratio; field emission SEM; grain size; ion bombardment effect; nitride thin films; sheet resistance; surface roughness; Chemical vapor deposition; Inorganic materials; MOCVD; Plasma properties; Plasma temperature; Sputtering; Tin; Titanium; Transistors; X-ray scattering;
Conference_Titel :
Science and Technology, 2001. KORUS '01. Proceedings. The Fifth Russian-Korean International Symposium on
Conference_Location :
Tomsk
Print_ISBN :
0-7803-7008-2
DOI :
10.1109/KORUS.2001.975241
