DocumentCode
2076672
Title
Nanoscale characterization of MOS systems by microwaves: Dopant profiling calibration
Author
Michalas, L. ; Lucibello, A. ; Joseph, C.H. ; Brinciotti, E. ; Kienberger, F. ; Proietti, E. ; Marcelli, R.
Author_Institution
Inst. for Microelectron. & Microsyst., Rome, Italy
fYear
2015
fDate
26-28 Jan. 2015
Firstpage
269
Lastpage
272
Abstract
The paper presents a calibration of scanning microwave microscopy signals for doping profiling in MOS systems. The experimentally obtained S-parameters are matched through a linear relation to the calculated MOS system capacitance and then to doping. The proposed approach is verified by simulations with the equivalent LCR circuit as well as by experimental results obtained on a calibration sample with differently doped areas.
Keywords
MIS devices; S-parameters; calibration; equivalent circuits; microwave devices; microwave measurement; semiconductor doping; MOS system; S-parameter; dopant profiling calibration; equivalent LCR circuit; nanoscale characterization; scanning microwave microscopy signal; Calibration; Capacitance; Doping; Microscopy; Microwave circuits; Microwave imaging; Calibration; Doping Profiling; RF Characterization; Scanning Microwave Microscopy (SMM); Semiconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location
Bologna
Type
conf
DOI
10.1109/ULIS.2015.7063825
Filename
7063825
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