Title :
SOI/SOS MOSFET universal compact SPICE model with account for radiation effects
Author :
Petrosyants, Konstantin O. ; Kharitonov, Igor A. ; Sambursky, Lev M.
Author_Institution :
Moscow Inst. of Electron. & Math., Nat. Res. Univ. "Higher Sch. of Econ.", Moscow, Russia
Abstract :
Universal SPICE model for submicron SOI/SOS MOSFETs based on BSIMSOI and EKV-SOI platforms with account for total ionizing dose-induced effects (TID), pulsed radiation effects, single events is presented. A special subcircuit consisting of parasitic transistors for sidewall and backgate leakage currents and other elements is connected to the standard SPICE model. In addition, the radiation-dependent parameters are described by physically based mathematical equations. Model parameter extraction methodology is described. Examples of rad-hard SOI/SOS CMOS circuits simulation are presented.
Keywords :
CMOS integrated circuits; MOSFET; SPICE; radiation hardening (electronics); silicon-on-insulator; BSIMSOI platform; EKV-SOI platform; SOI-SOS MOSFET; TID; leakage currents; parameter extraction; parasitic transistors; pulsed radiation effects; rad-hard CMOS circuits; radiation effects; radiation-dependent parameters; radiation-hardened circuit; single events; submicron MOSFET; total ionizing dose-induced effects; universal compact SPICE model; CMOS integrated circuits; Integrated circuit modeling; MOSFET; Mathematical model; Radiation effects; Semiconductor device modeling; SOI/SOS MOSFETs; compact SPICE models; parameter extraction; pulse effects; radiation effects; radiation-hardened circuit design; simulation time; single events; total dose effects;
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063834
