Title :
Impact of back plane on the carrier mobility in 28nm UTBB FDSOI devices, for ESD applications
Author :
Athanasiou, S. ; Galy, P. ; Cristoloveanu, S.
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
We present measurements and parameter extraction performed on 28nm UTBB FDSOI MOSFETs with two different Back Plane configurations (p-type and n-type BP). The change in BP doping and work function affects directly the back-channel characteristics and indirectly, via interface coupling, the front-channel properties. We investigate the parameters relevant for the design of ESD protection devices: threshold voltage shift and electron mobility in long and short transistors.
Keywords :
MOSFET; electron mobility; electrostatic discharge; silicon-on-insulator; work function; BP doping; ESD protection device applications; UTBB FDSOI MOSFET devices; back plane configurations; back-channel characteristics; carrier mobility; electron mobility; electrostatic discharge; front-channel properties; interface coupling; long short transistors; measurement extraction; parameter extraction; size 28 nm; threshold voltage shift; ultrathin body and buried oxide-fully depleted silicon-on-insulator; work function; Doping; Electron mobility; Electrostatic discharges; Logic gates; MOSFET; Robustness; Threshold voltage; CMOS; ESD; FDSOI; Mobility;
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063837
