Author :
Elvira, D. ; Braive, R. ; Hostein, R. ; Larqué, M. ; Fain, B. ; Beaudoin, G. ; Le Gratiet, L. ; Girard, J.C. ; David, C. ; Wang, Z.Z. ; Robert-Philip, I. ; Abram, I. ; Sagnes, I. ; Beveratos, A. ; Maksymov, I.S. ; Besbes, M. ; Hugonin, J.P. ; Lalanne, P.
Author_Institution :
Lab. de Photonique et de Nanostruct., CNRS, Marcoussis, France
Keywords :
III-V semiconductors; arsenic compounds; indium compounds; light sources; quantum communication; quantum entanglement; quantum optics; semiconductor quantum dots; spontaneous emission; InAsP-InP; broadband Purcell factors; entangled-photon sources; metallic subwavelength plasmonic cavity; photon emission; single photon source; telecommunication wavelength; Broadband communication; Cavity resonators; Indium phosphide; Photonics; Quantum dots; Quantum entanglement;