A Method for the Development of Monolithical Integrated Resonators on GaAs with Increased Q-Factor

In this paper a type of resonator is proposed, which is usable in monolithical integrated microwave circuits on GaAs, whenever a better Q-factor is required as can be delivered from lumped element resonant circuits. The resonators presented here are calculated with the help of an universal automatic field-theoretical program, basing on the numerical evaluation of orthogonal-raw expansion. From the results of the field theoretical calculations the elements of the equivalent circuits have been determined. The Q-factor of the resonator has been improved by removing the GaAs substrate in the environment close to the resonator by means of reactive ion-etching. The applicability of the explained techniques has been proved by measurements.