DocumentCode
2077264
Title
High-frequency electrically driven quantum dot single-photon source
Author
Kessler, C. ; Reischle, M. ; Schulz, W.-M. ; Eichfelder, M. ; Rossbach, R. ; Jetter, M. ; Michler, P.
Author_Institution
Res. Center SCoPE, Univ. of Stuttgart, Stuttgart, Germany
fYear
2011
fDate
22-26 May 2011
Firstpage
1
Lastpage
1
Abstract
In our work pulsed electrical excitation was used to excite single InP/Ga0.51In0.49P quantum dots which were embedded into the intrinsic region of a p-i-n mesa structure. To enhance collection efficiency the active region is surrounded by two Bragg reflectors forming a low-Q cavity. The samples are excited using a pulse pattern generator together with a fast amplifier. We obtain triggered single-photon emission in the red spectral range (~ 650 nm) at an excitation repetition rate of up to 200 MHz.
Keywords
III-V semiconductors; gallium compounds; indium compounds; laser cavity resonators; optical elements; quantum optics; semiconductor quantum dots; Bragg reflectors; InP-Ga0.51In0.49P; fast amplifier; high-frequency electrically driven quantum dot; intrinsic region; low-Q cavity; p-i-n mesa structure; pulse pattern generator; pulsed electrical excitation; red spectral range; single-photon emission; single-photon source;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location
Munich
ISSN
Pending
Print_ISBN
978-1-4577-0533-5
Electronic_ISBN
Pending
Type
conf
DOI
10.1109/CLEOE.2011.5943391
Filename
5943391
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