• DocumentCode
    2077815
  • Title

    Limits to the efficiency of quantum lithography

  • Author

    Björk, G. ; Kothe, C. ; Bourennane, M. ; Inoue, S.

  • Author_Institution
    Sch. of Inf. & Commun. Technol., R. Inst. of Technol. (KTH), Kista, Sweden
  • fYear
    2011
  • fDate
    22-26 May 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    While it is certainly possible to generate sub wavelength patterns with arbitrary resolution, the exposure efficiency will scale in a very unfortunate manner. The photons in fields with the required N photon entanglement diffract independently, and hence spread out over the exposed area, making the event that all N photons hit the same detector element very rare. If the lithographic film consist of 5 independent detecting elements, then the exposure time τ scale as τ = S~N. For a 500 x 500 pixel image, this means that the exposure time will increase with a factor 250 000 when going from N to N+l photons.
  • Keywords
    lithography; quantum optics; arbitrary resolution; detector element; lithographic film; photon entanglement; quantum lithography; wavelength patterns;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
  • Conference_Location
    Munich
  • ISSN
    Pending
  • Print_ISBN
    978-1-4577-0533-5
  • Electronic_ISBN
    Pending
  • Type

    conf

  • DOI
    10.1109/CLEOE.2011.5943416
  • Filename
    5943416