Title :
High-photon-detection-efficiency silicon avalanche photodiode with charge-sensitive amplifier
Author :
Tsujino, Kenji ; Tomita, Akihisa
Author_Institution :
NEC Tsukuba Labs., Japan Sci. & Technol. Agency, Tsukuba, Japan
Abstract :
In this work, we developed a high-photon detection efficiency photon counter based on a Si APD with a low-noise charge-sensitive amplifier. For an APD-based photon counter, photon detection efficiency can be improved by increasing two parameters: quantum efficiency and photoelectron detection probability. Firstly, the quantum efficiency is defined in terms of the number of primary electron-hole (e-h) pairs per incident photon.
Keywords :
avalanche photodiodes; elemental semiconductors; photon counting; silicon; Si; charge-sensitive amplifier; high-photon-detection-efficiency; low noise; photoelectron detection probability; photon counter; quantum efficiency; silicon avalanche photodiode;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4577-0533-5
Electronic_ISBN :
Pending
DOI :
10.1109/CLEOE.2011.5943439
