Title :
Integrated DC-DC converter design for improved WCDMA power amplifier efficiency in SiGe BiCMOS technology
Author :
Guckenberger, Drew ; Kornegay, Kevin
Author_Institution :
Cornell Broadband Commun. Res. Lab., Cornell Univ., Ithaca, NY, USA
Abstract :
We present a DC-DC converter design for on-chip integration with a WCDMA power amplifier to provide supply voltage modulation and efficiency enhancement. It operates from a 3.3 V supply using 0.35 μm ´high-breakdown´ CMOS transistors available in IBM´s SiGe BiCMOS 6H:P process. Five selectable output voltage levels are available ranging from 1.3 V to 3.3 V. The converter is optimized for operation at 88.7 MHz. Simulation results show an average efficiency of 78.8% over the power amplifier operating conditions and a peak enabled efficiency of 86%. CCM-DCM mode switching and transistor width switching are used to minimize losses at the different output voltage and current load levels.
Keywords :
BiCMOS integrated circuits; DC-DC power convertors; PWM power convertors; VHF amplifiers; circuit simulation; code division multiple access; integrated circuit design; power amplifiers; switching convertors; 0.35 micron; 1.3 to 3.3 V; 3.3 V; 78.8 percent; 86 percent; 88.7 MHz; CCM-DCM mode switching; PWM switching converter; SiGe; SiGe BiCMOS technology; WCDMA power amplifier efficiency enhancement; average efficiency; buck converter; high-breakdown CMOS transistors; integrated DC-DC converter; output voltage level selection; peak enabled efficiency; supply voltage modulation; transistor width switching; Batteries; BiCMOS integrated circuits; Circuit topology; DC-DC power converters; Germanium silicon alloys; Multiaccess communication; Power amplifiers; Silicon germanium; Strontium; Voltage;
Conference_Titel :
Low Power Electronics and Design, 2003. ISLPED '03. Proceedings of the 2003 International Symposium on
Print_ISBN :
1-58113-682-X
DOI :
10.1109/LPE.2003.1231950
