DocumentCode
2078595
Title
Two-Dimensional Modeling and Small-Signal Analysis of GaAs MESFETs
Author
Cáceres, J.L. ; López, E. ; Pérez, J.
Author_Institution
SSR Department. E.T.S.I.T. Polytechnical University of Madrid., Ciudad Universitaria s/n. 28040 Madrid.
Volume
2
fYear
1990
fDate
9-13 Sept. 1990
Firstpage
1251
Lastpage
1256
Abstract
A simple 2-D physical model for the GaAs MESFET and an efficient numerical scheme for its small-signal analysis are described. Results obtained with our simulator and comparisons with real devices show that the model is realistic and suitable for device CAD and optimization.
Keywords
Electron traps; Gallium arsenide; Geometry; MESFETs; Poisson equations; Predictive models; Semiconductor process modeling; Solid modeling; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1990. 20th European
Conference_Location
Budapest, Hungary
Type
conf
DOI
10.1109/EUMA.1990.336238
Filename
4136175
Link To Document