Title :
Temperature and carrier induced spin coherence in GaAs
Author :
Bratschitsch, R. ; Chen, Z. ; Cundiff, S.T.
Author_Institution :
Colorado Univ., Boulder, CO
Abstract :
We observe a surprising increase of the transverse electron spin lifetime with increased lattice temperature up to 100 K in undoped bulk GaAs. The electron g-factor deviates from a linear temperature dependence below 50 K
Keywords :
Faraday effect; III-V semiconductors; carrier density; carrier lifetime; electron spin polarisation; g-factor; gallium arsenide; optical rotation; 100 K; Faraday rotation; GaAs; Voigt geometry; carrier density; carrier induced spin coherence; electron g-factor; lattice temperature; linear temperature dependence; temperature induced spin coherence; time-resolved experiments; transverse electron spin lifetime; undoped bulk GaAs;
Conference_Titel :
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-778-4
