A 6–9GHz WiMedia UWB RF transmitter in 90nm CMOS

Author

Zhang, Zisan ; Mertens, Koen ; Tiebout, Marc ; Ek, Staffan ; Marsili, Stefano ; Matveev, Denis ; Sandner, Christoph

Author_Institution

Dev. Center Villach, Infineon Technol. Austria, Villach

fYear

2008

fDate

June 17 2008-April 17 2008

Firstpage

39

Lastpage

42

Abstract

A 6-9 GHz RF transmitter fabricated in a standard digital 90 nm CMOS technology and targeted for WiMedia UWB bandgroup 3 and 6 is presented. The transmitter features high linearity, low spurious emission, low power and small chip area. Measured data show - 5.7dBm output power, -1.4- dBm OIP3, -47 dBc LO leakage and -33.8 dBc sideband rejection with only 72 mW from a 1.2 V power supply at a minimal chip area of 0.24 mm² active area.

Keywords

CMOS integrated circuits; field effect MMIC; low-power electronics; radio transmitters; ultra wideband communication; CMOS technology; IQ modulator; MMIC mixers; WiMedia ultra wideband RF transmitter; frequency 6 GHz to 9 GHz; power 72 mW; size 90 nm; up-conversion mixer; voltage 1.2 V; Active inductors; CMOS technology; Energy consumption; FCC; Logic; Power amplifiers; Power measurement; Radio frequency; Radio transmitters; Radiofrequency amplifiers; CMOS; IQ divider; IQ modulator; LO buffer; RF Transmitter; UWB; Up-conversion mixer; active inductor; low-power; low-voltage; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE

Conference_Location

Atlanta, GA

ISSN

1529-2517

Print_ISBN

978-1-4244-1808-4

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2008.4561381

Filename

4561381