• DocumentCode
    2080567
  • Title

    The current status of plasma grown silicon dioxide layers on SiGe epitaxial layers for surface passivation and possible gate oxide application

  • Author

    Hall, S. ; Goh, I.S. ; Zhang, J.F. ; Eccleston, W.

  • Author_Institution
    Dept. of Electr. Eng. & Electron., Liverpool Univ., UK
  • fYear
    1995
  • fDate
    34744
  • Firstpage
    42675
  • Lastpage
    42679
  • Abstract
    Early work on plasma grown oxides was encouraging in that it demonstrated that good breakdown strength was achievable, although interface states were seen to dominate the electrical behaviour of the SiO2/SiGe interface. More recently, further work has produced a number of very promising results for these grown oxides. These results are reviewed and the significance for SiGe based bipolar and MOS technologies discussed
  • Keywords
    Ge-Si alloys; oxidation; passivation; semiconductor epitaxial layers; semiconductor materials; semiconductor technology; MOS technologies; SiGe epitaxial layers; SiO2-SiGe; SiO2/SiGe interface; bipolar technologies; breakdown strength; electrical behaviour; gate oxide; interface states; plasma grown oxides; silicon dioxide layers; surface passivation;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Advanced MOS and Bi-Polar Devices, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • DOI
    10.1049/ic:19950187
  • Filename
    473088
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2080567