Title :
A tapered cascaded multi-stage distributed amplifier with 370GHz GBW in 90nm CMOS
Author :
Arbabian, Amin ; Niknejad, Ali M.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California, Univ., Berkeley, CA
fDate :
June 17 2008-April 17 2008
Abstract :
A tapered cascaded multi-stage distributed amplifier (T-CMSDA) has been designed and fabricated in a 90 nm digital CMOS process. The amplifier achieves a 3-dB bandwidth of 73.5 GHz with a pass-band gain of 14 dB. This results in a gain-bandwidth (GBW) product of 370 GHz. The realized zero-dB BW is 83.5 GHz and the input and output matchings stay better than -9 dB up to 77 and 94 GHz, respectively. The chip consumes an area of 1.5 mm by 1.15 mm while drawing 70 mA from a 1.2 V supply.
Keywords :
CMOS digital integrated circuits; distributed amplifiers; submillimetre wave amplifiers; submillimetre wave integrated circuits; GBW; T-CMSDA; bandwidth 83.5 GHz; current 70 mA; digital CMOS process; frequency 370 GHz; size 90 nm; tapered cascaded multistage distributed amplifier; voltage 1.2 V; CMOS process; CMOS technology; Capacitance; Circuits; Cutoff frequency; Distributed amplifiers; Impedance; Inductance; Transmission line theory; Wideband; CMOS DA; Cascaded Multi-Stage Distributed Amplifier; Elevated Coplanar Waveguides; Tapering;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1808-4
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2008.4561385
