A tapered cascaded multi-stage distributed amplifier with 370GHz GBW in 90nm CMOS

Author

Arbabian, Amin ; Niknejad, Ali M.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California, Univ., Berkeley, CA

fYear

2008

fDate

June 17 2008-April 17 2008

Firstpage

57

Lastpage

60

Abstract

A tapered cascaded multi-stage distributed amplifier (T-CMSDA) has been designed and fabricated in a 90 nm digital CMOS process. The amplifier achieves a 3-dB bandwidth of 73.5 GHz with a pass-band gain of 14 dB. This results in a gain-bandwidth (GBW) product of 370 GHz. The realized zero-dB BW is 83.5 GHz and the input and output matchings stay better than -9 dB up to 77 and 94 GHz, respectively. The chip consumes an area of 1.5 mm by 1.15 mm while drawing 70 mA from a 1.2 V supply.

Keywords

CMOS digital integrated circuits; distributed amplifiers; submillimetre wave amplifiers; submillimetre wave integrated circuits; GBW; T-CMSDA; bandwidth 83.5 GHz; current 70 mA; digital CMOS process; frequency 370 GHz; size 90 nm; tapered cascaded multistage distributed amplifier; voltage 1.2 V; CMOS process; CMOS technology; Capacitance; Circuits; Cutoff frequency; Distributed amplifiers; Impedance; Inductance; Transmission line theory; Wideband; CMOS DA; Cascaded Multi-Stage Distributed Amplifier; Elevated Coplanar Waveguides; Tapering;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE

Conference_Location

Atlanta, GA

ISSN

1529-2517

Print_ISBN

978-1-4244-1808-4

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2008.4561385

Filename

4561385